2012. 7. 26 1/5 semiconductor technical data KMD6D0DN40Q dual n-ch trench mosfet revision no : 0 general description this trench mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for dc/dc converters. features h v dss =40v, i d =6a. h drain-source on resistance. r ds(on) =38m ? (max.) @v gs =10v r ds(on) =50m ? (max.) @v gs =4.5v h super high dense cell design h very fast switching maximum rating (ta=25 ? unless otherwise noted) pin connection (top view) 1 2 3 4 8 7 6 5 s 1 g 1 s 2 g 2 d 1 d 1 d 2 d 2 1 2 3 4 8 7 6 5 * : surface mounted on fr4 board (25mm ? 25mm, 1.5t, t ? 10sec) b2 g h b1 1 4 5 8 a p d l t flp-8 0.20+0.1/-0.05 t p 1.27 millimeters dim a 4.85 0.2 + _ b1 3.94 0.2 + _ b2 6.02 0.3 + _ d 0.4 0.1 + _ g 0.15+0.1/-0.05 h 1.63 0.2 + _ l 0.65 0.2 + _ kmd6d0dn 40q 101 marking type name lot no. characteristic symbol rating unit drain source voltage v dss 40 v gate source voltage v gss ? 12 v drain current t a =25 ? i d * 6 a pulsed (note1) i dp 24 a peak diode recovery dv/dt (note 2) dv/dt 4.5 v/ns peak diode recovery di/dt di/dt 200 a/us single pulsed avalanche energy (note 3) e as 66 mj repetitive avalanche energy (note 1) e ar 2.7 mj maximum junction temperature t j -50~150 ? storage temperature range t stg -50~150 ? thermal resistance, junction to ambient r thja * 62.5 ? /w
2012. 7. 26 2/5 KMD6D0DN40Q revision no : 0 electrical characteristics (tj=25 ? ) unless otherwise noted characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 40 - - v drain cut-off current i dss v ds =40v, v gs =0v - - 1 a gate leakage current i gss v gs = ? 12v, v ds =0v - - ? 10 a gate threshold voltage v th v ds =v gs, i d =250 a 1.0 2.0 2.5 v drain-source on resistance r ds(on) v gs =10.0v, i d =6a - 27 38 m ? v gs =4.5v, i d =5a - 35 50 forward transconductance g fs v ds =10v, i d =6a(note4, 5) - 10 - s dynamic input capacitance c iss v ds =15v, f=1mhz, v gs =0v - 460 - pf ouput capacitance c oss - 80 - reverse transfer capacitance c rss - 50 - total gate charge q g v ds =20v, v gs =10v, i d =6a (note4, 5) - 8.0 - nc gate-source charge q gs - 1.5 - gate-drain charge q gd - 2.0 - total gate charge q g v ds =20v, v gs =5v, i d =6a (note4, 5) - 4.1 - nc turn-on delay time t d(on) v dd =20v, v gs =10v i d =6a, r g =6 ? (note4, 5) - 12 - ns turn-on rise time t r - 8 - turn-off delay time t d(off) - 35 - turn-off fall time t f - 6 - source-drain diode ratings source-drain forward voltage v sdf i dr =6a, v gs =0v - 0.87 1.2 v note1) repetivity rating : pulse width limited by juntion temperature. note2) i s ? 6a, di/dt ? 100a/ k , v dd ? bv dss , starting tj = 25 ? . note3) l = 1mh, i as = 6a, v dd = 32v, rg = 25 ? , starting tj = 25 ? . note4) pulse test : pulse width ? 300 k , duty cycle ? 2% note5) essentially independenl of operating temperature.
2012. 7. 26 3/5 KMD6D0DN40Q revision no : 0 drain - source voltage v ds (v) source - drain forward voltage v sdf (v) 0 0 2 8 16 4 12 20 46810 drain current i d (a) gate - source voltage v gs (v) drain current i d (a) reverse drain current i dr (a) -80 -40 40 80 160 120 0 0 1 4 2 5 3 junction temperature tj ( ) c v gs =4.0 v gs =4.5 v gs =10 v gs =3.5 v gs =3.0 v gs =5 common source t c = 25 pulse test c common source v gs =v ds i d =250 a pulse test gate threshold voltage v th (v) fig1. i d - v ds fig3. i d - v gs fig5. v th - t j fig6. i dr - v sdf 234 10 56789 25 c 10 1 10 2 10 0 common source v ds =10v pulse test 100 c 0.4 0.6 0.8 2.0 1.0 1.2 1.4 1.6 1.8 25 c 10 1 10 2 10 0 100 c 0 0.16 0.12 0.14 0.06 0.08 0.02 0.04 0.1 10 15 05 20 drain current i d (a) drain source on resistance r ds(on) ( ? ) v g s = 4.5 v gs =10v common source t c = 25 pulse test c fig2. r ds(on) - i d drain source on resistance r ds(on) (m ? ) 0 40 100 80 20 60 0 160 120 80 -40 40 -80 common source v ds =10v pulse test common drain v gs =0v pulse test junction temperature tj ( ) c fig4. r ds(on) - t j
2012. 7. 26 4/5 KMD6D0DN40Q revision no : 0 drain current i d (a) drain - source voltage v ds (v) fig8. safe operation area 10 1 10 2 10 0 10 -1 10 0 10 -1 10 2 10 1 10 2 t c = 25 t j = 150 single pulse c c dc 10ms 1ms 100 s 10 s operation in this area is limited by r ds(on) 100ms time ( sec ) 10 1 10 -3 10 -2 10 -1 10 0 10 -4 fig9. transient thermal response curve 10 1 10 2 10 0 10 -1 transient thermal resistance ( ? . w) duty cycle d = t 1 /t 2 t 1 t 2 p dm single pluse 0.0 2 0 .1 0.01 0.5 0.0 5 0.2 gate-source voltage v gs (v) gate - charge q g (nc) 0 0 2 4 8 10 2 6 12 468 16 10 12 14 v ds =20v i d =6a fig7. qg - v gs
2012. 7. 26 5/5 KMD6D0DN40Q revision no : 0 fig. 10 gate charge v gs 10 v q g q gd q gs q v ds v gs t r t d(on) 10% 90% t on t f t d(off) t off i d i d fig. 11 resistive load switching v ds v gs v ds v gs 1.0 ma schottky diode 10 v 6 ? r l 0.8 v dss 0.5 v dss
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